[PhD] Reliability and Short-Circuit Robustness of GaN Power HEMTs F/H

Gallium Nitride (GaN) power transistors are increasingly deployed in high-efficiency power conversion systems due to their superior switching performance and high power density. However, their behavior under extreme operating conditions, particularly short-circuit events, remains a critical reliability concern limiting their adoption in safety-critical applications such as aerospace, automotive and energy systems.

The objective of this PhD is to investigate the physical degradation mechanisms governing short-circuit stress in enhancement-mode GaN HEMTs and to develop predictive methodologies capable of identifying device robustness before catastrophic failure.

The research activities will include:

• Electrical characterization of commercial GaN power transistors.
• Development and implementation of advanced short-circuit test benches.
• Investigation of degradation mechanisms under repetitive and single-event short-circuit stresses.
• Analysis ...