Opportunity Description
I am looking for motivated candidates to join our project on InP-based HEMT devices for THz applications at IIT Delhi . We are hiring for two Research Associate (RA) positions: 1. Research Associate (Project lead) – Coordination between design, fabrication and dc-rf measurement team. For candidates with experience in semiconductor/nanoelectronic device design, fabrication experience, device characterization experience, RF/microwave measurements, TCAD, or device modelling. 2. Research Associate – TCAD Design of InP HEMT Epilayer, device and modeling For candidates interested in TCAD-based design and optimization of InP HEMT multilayer epilayer structures and device geometry, with corresponding experience. PhD (submitted) or MTech with 3 year reaserch experience preferred in both cases. This is an exciting opportunity to work on III–V semiconductor devices, THz electronics, high-frequency measurements and indigenous technology development . Interested candidates may apply through the adv...
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