Opportunity Description
Posting Number: S07116P
Job Description:
Perform theoretical calculations based on first-principles methods of the degradation of semiconductor devices in harsh environments, especially of the degradation caused by radiation. Ab initio methods used to calculate the band structure, defect morphology and electronic properties, electron energy losses and scattering rates should be coupled to advanced semi-classical electron-transport simulations (such as Monte Carlo) to calculate the electron relaxation, defect generation, and the related degradation of the device characteristics.
Job Description:
Perform theoretical calculations based on first-principles methods of the degradation of semiconductor devices in harsh environments, especially of the degradation caused by radiation. Ab initio methods used to calculate the band structure, defect morphology and electronic properties, electron energy losses and scattering rates should be coupled to advanced semi-classical electron-transport simulations (such as Monte Carlo) to calculate the electron relaxation, defect generation, and the related degradation of the device characteristics.
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