Opportunity Description
We are seeking a talented and passionate Senior Process Engineer to join our silicon carbide (SiC) crystal growth team. The successful candidate will be responsible for developing crystal growth technologies, operating crystal growth tools, and supporting the production of semi-insulating SiC wafers used as substrates for RF and millimeter-wave GaN devices. This position is within the National Semiconductor Translation and Innovation Centre Gallium Nitride (NSTIC - GaN) program.
Responsibilities:
Develop and optimize crystal growth technologies for semi-insulating silicon carbide (SiC) wafers used as substrates for RF and millimeter-wave GaN devices.
Design, execute, and analyze SiC crystal growth experiments using Physical Vapor Transport (PVT) and related growth techniques.
Characterize SiC crystals and wafers, including resistivity, defect density, crystal quality, and uniformity.
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